In this review paper, we take a comprehensive view of the performance of the silicon-photonic technologies developed to date for photonic interconnect applications. We also present the latest performance and results of our “zero-change” silicon photonics platforms in 45 nm and 32 nm SOI CMOS.
The next generations of large-scale data-centers and supercomputers demand optical interconnects to migrate to 400G and beyond. Microring modulators in silicon-photonics VLSI chips are promising devices to meet this demand due to their energy efficiency and compatibility with dense wavelength division multiplexed chip-to-chip optical I/O.
In this work, we present WaveLight, a monolithic silicon-photonics platform whereby a low latency reliable deterministic protocol with optical functions are designed directly into an existing high-volume CMOS process.
Apodized bi-level fiber-to-chip grating couplers, designed using a complex-wavevector band-structure approach, are demonstrated in a commercially available, monolithic SOI CMOS process achieving 92% (−0.36dB) coupling efficiency.
Here, we present a bit-statistical tuner that decouples tracking of optical one and zero-levels to realize non-dc-balanced data transmission, an “eye-max”-locking controller, and self-heating cancellation without need for a high-speed sensing frontend.
This demonstration could represent the beginning of an era of chip-scale electronic–photonic systems with the potential to transform computing system architectures, enabling more powerful computers, from network infrastructure to data centres and supercomputers.
This proof-of-principle device demonstrates the potential of commercial CMOS microelectronics as an advanced quantum photonics platform with the capability of large volumes and pristine process control, where state-of-the-art high-speed digital circuits could interact with quantum photonic circuits.
In this paper, we demonstrate a highly directional vertical grating coupler with > 70% chip-to-fiber coupling efficiency (CE) and a 78 nm 1- dB bandwidth fabricated in a 45 nm commercially available microelectronics SOI CMOS process.